The use of a high-power 1060 nm diode laser, with hundreds of milliseconds scale emission capabilities, is a novel method for skin rejuvenation that could emulate the efficacy and safety of the long-pulse 1064nm Nd: YAG solid-state laser, while keeping the advantages of semiconductor lasers: pulse quality, contact cooling and low maintenance. The patient was a 43-year-old Caucasian woman with Fitzpatrick Skin Phototype II, presenting facial sagginess and nasogenian fold. A 4 sessions treatment (one every six weeks) was performed by a High Power Diode Laser at 1060 nm. The laser parameters were: 10J/cm2 fluence and 400ms pulse duration. A 4mm distancer was placed on the hand-piece. An infrared thermometer was used to ensure that the skin reached 42ºC. The high-power diode laser at 1060 nm is a new and more approachable alternative that has demonstrated to be effective and safe for facial rejuvenation. Keywords: Facial rejuvenation, High Power Diode Laser, Nd: YAG, non-ablative skin rejuvenation, pulse duration, wavelength, wrinkles, 1064 nm
Corresponding Author: Viera-Mármol G.