E-ISSN 2602-3164
EJMI. 2019; 3(3): 241-244 | DOI: 10.14744/ejmi.2019.84835

Efficacy and Safety of high-power Diode Laser at 1060 nm for skin rejuvenation treatment

Gabriel Buendía Bordera1, Maribel Martí Giménez1, Maria De los Llanos Pérez2, Júlia Oliva Morell2, Gregorio Viera-Mármol2, Caridad Elena Morales Munera1
1Instituto Laser de Fotomedicina, Barcelona, Spain, 2Cocoon Medical, Barcelona, Spain

The use of a high-power 1060 nm diode laser, with hundreds of milliseconds scale emission capabilities, is a novel method for skin rejuvenation that could emulate the efficacy and safety of the long-pulse 1064nm Nd: YAG solid-state laser, while keeping the advantages of semiconductor lasers: pulse quality, contact cooling and low maintenance. The patient was a 43-year-old Caucasian woman with Fitzpatrick Skin Phototype II, presenting facial sagginess and nasogenian fold. A 4 sessions treatment (one every six weeks) was performed by a High Power Diode Laser at 1060 nm. The laser parameters were: 10J/cm2 fluence and 400ms pulse duration. A 4mm distancer was placed on the hand-piece. An infrared thermometer was used to ensure that the skin reached 42ºC. The high-power diode laser at 1060 nm is a new and more approachable alternative that has demonstrated to be effective and safe for facial rejuvenation. Keywords: Facial rejuvenation, High Power Diode Laser, Nd: YAG, non-ablative skin rejuvenation, pulse duration, wavelength, wrinkles, 1064 nm

Cite This Article

Buendía Bordera G, Martí Giménez M, De los Llanos Pérez M, Oliva Morell J, Viera-Mármol G, Morales Munera C. Efficacy and Safety of high-power Diode Laser at 1060 nm for skin rejuvenation treatment. EJMI. 2019; 3(3): 241-244

Corresponding Author: Gregorio Viera-Mármol

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